The Growth of Ternary Semiconductor Crystals Suitable for Device Applications
نویسندگان
چکیده
In general, the growth of I-Ill-Vlz and If-1V-V2 chalcopyrite-type crystals of suitable quality for device applications has been difficult. In some cases, the problem lies in not being able to produce large single crystal specimens, while in others the quality of the crystal is not adequate for the purposes intended. Techniques for both material synthesis and crystal growth of chalcopyrite compounds will be discussed along with factors which lead to the formation of growth defects. Examples from recent experiments on the growth of three important non-linear optical materials, CdGeAs2, AgGaSez, and AgGaS2, will be given.
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